Suwit Kiravittaya, Ph.D.

อ. ดร.สุวิทย์ กิระวิทยา

Education

  • Ph.D.    Electrical Engineering, Chulalongkorn University, Thailand. 2003.
  • B.Eng.  Electrical Engineering, Chulalongkorn University, Thailand. 1998.

Email: suwit.ki@chula.ac.th

Research Interest

  • Photonics
  • Electronics
  • Solar Cell
  • Photodetector
  • LED
  • Light Emitting Diode
  • Laser
  • Molecular Beam Epitaxy
  • Optical Properties
  • Semiconductor
  • Nanostructure
  • Quantum Technology
  • Quantum Sensing
  • Quantum Secure Communication
  • Quantum Computing

Research Cluster

Link to

1.

Zon,; Korkerdsantisuk, T; Sangpho, A; Thainoi, S; Prasatsap, U; Kiravittaya, S; Thornyanadacha, N; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Investigation of hybrid InSb and GaSb quantum nanostructures Journal Article

In: Microelectronic Engineering, vol. 237, 2021, ISSN: 01679317, (cited By 0).

Abstract | Links

2.

Chikumpa, M; Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Raman peak shifts by applied magnetic field in InSb/AlxIn1−xSb superlattices Journal Article

In: Materials Research Express, vol. 7, no. 10, 2020, ISSN: 20531591, (cited By 0).

Abstract | Links

3.

Rongrueangkul, K; Srisinsuphya, P; Thainoi, S; Kiravittaya, S; Nuntawong, N; Thornyanadacha, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (B) Basic Research, vol. 257, no. 2, 2020, ISSN: 03701972, (cited By 0).

Abstract | Links

4.

Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S; Ota, Y; Iwamoto, S; Arakawa, Y

Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates Journal Article

In: Journal of Applied Physics, vol. 126, no. 8, 2019, ISSN: 00218979, (cited By 1).

Abstract | Links

5.

Srisinsuphya, P; Rongrueangkul, K; Khanchaitham, R; Thainoi, S; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength Journal Article

In: Journal of Crystal Growth, vol. 514, pp. 36-39, 2019, ISSN: 00220248, (cited By 2).

Abstract | Links

6.

Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate Journal Article

In: Journal of Crystal Growth, vol. 512, pp. 136-141, 2019, ISSN: 00220248, (cited By 0).

Abstract | Links

7.

Lekwongderm, P; Chumkaew, R; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field Journal Article

In: Journal of Crystal Growth, vol. 512, pp. 198-202, 2019, ISSN: 00220248, (cited By 1).

Abstract | Links

8.

Chevuntulak, C; Rakpaises, T; Sridumrongsak, N; Thainoi, S; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells Journal Article

In: Journal of Crystal Growth, vol. 512, pp. 159-163, 2019, ISSN: 00220248, (cited By 1).

Abstract | Links

9.

Posri, S; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 1, 2019, ISSN: 18626300, (cited By 2).

Abstract | Links

10.

Zon,; Phienlumlert, P; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S; Ota, Y; Iwamoto, S; Arakawa, Y

Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 1, 2019, ISSN: 18626300, (cited By 4).

Abstract | Links

11.

Narabadeesuphakorn, P; Thainoi, S; Tandaechanurat, A; Kiravittaya, S; Nuntawong, N; Sopitopan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties Journal Article

In: Journal of Crystal Growth, vol. 487, pp. 40-44, 2018, ISSN: 00220248, (cited By 5).

Abstract | Links

12.

Thainoi, S; Kiravittaya, S; Poempool, T; Zon,; Nuntawong, N; Sopitpan, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures Journal Article

In: Journal of Crystal Growth, vol. 477, pp. 30-33, 2017, ISSN: 00220248, (cited By 7).

Abstract | Links

13.

Thainoi, S; Kiravittaya, S; Poempool, T; Zon,; Sopitpan, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Growth of truncated pyramidal InSb nanostructures on GaAs substrate Journal Article

In: Journal of Crystal Growth, vol. 468, pp. 737-739, 2017, ISSN: 00220248, (cited By 6).

Abstract | Links

14.

Zon,; Poempool, T; Kiravittaya, S; Sopitpan, S; Thainoi, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate Journal Article

In: Journal of Crystal Growth, vol. 468, pp. 541-546, 2017, ISSN: 00220248, (cited By 2).

Abstract | Links

15.

Zon,; Poempool, T; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Thainoi, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate Journal Article

In: Electronic Materials Letters, vol. 12, no. 4, pp. 517-523, 2016, ISSN: 17388090, (cited By 6).

Abstract | Links

16.

Khoklang, K; Kiravittaya, S; Kunrugsa, M; Prongjit, P; Thainoi, S; Ratanathammaphan, S; Panyakeow, S

Molecular beam epitaxial growth of GaSb quantum dots on (0 0 1) GaAs substrate with InGaAs insertion layer Journal Article

In: Journal of Crystal Growth, vol. 425, pp. 291-294, 2015, ISSN: 00220248, (cited By 3).

Abstract | Links

17.

Kunrugsa, M; Kiravittaya, S; Sopitpan, S; Ratanathammaphan, S; Panyakeow, S

Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates Journal Article

In: Journal of Crystal Growth, vol. 401, pp. 441-444, 2014, ISSN: 00220248, (cited By 12).

Abstract | Links

18.

Kunrugsa, M; Kiravittaya, S; Panyakeow, S; Ratanathammaphan, S

Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxy Journal Article

In: Journal of Crystal Growth, vol. 402, pp. 285-290, 2014, ISSN: 00220248, (cited By 6).

Abstract | Links

19.

Boonpeng, P; Kiravittaya, S; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

InGaAs quantum-dot-in-ring structure by droplet epitaxy Journal Article

In: Journal of Crystal Growth, vol. 378, pp. 435-438, 2013, ISSN: 00220248, (cited By 11).

Abstract | Links

20.

Kiravittaya, S; Songmuang, R; Jin-Phillipp, N Y; Panyakeow, S; Schmidt, O G

Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching Journal Article

In: Journal of Crystal Growth, vol. 251, no. 1-4, pp. 258-263, 2003, ISSN: 00220248, (cited By 28; Conference of Proceedings of the Molecular Beam Epitaxy 2002 ; Conference Date: 15 September 2002 Through 20 September 2002; Conference Code:60890).

Abstract | Links

21.

Songmuang, R; Kiravittaya, S; Sawadsaringkarn, M; Panyakeow, S; Schmidt, O G

Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dots Journal Article

In: Journal of Crystal Growth, vol. 251, no. 1-4, pp. 166-171, 2003, ISSN: 00220248, (cited By 33; Conference of Proceedings of the Molecular Beam Epitaxy 2002 ; Conference Date: 15 September 2002 Through 20 September 2002; Conference Code:60890).

Abstract | Links

22.

Schmidt, O G; Deneke, Ch.; Kiravittaya, S; Songmuang, R; Heidemeyer, H; Nakamura, Y; Zapf-Gottwick, R; Müller, C; Jin-Phillipp, N Y

Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes Journal Article

In: IEEE Journal on Selected Topics in Quantum Electronics, vol. 8, no. 5, pp. 1025-1034, 2002, ISSN: 1077260X, (cited By 95).

Abstract | Links

23.

Kiravittaya, S; Songmuang, R; Changmuang, P; Sopitpan, S; Ratanathammaphan, S; Sawadsaringkarn, M; Panyakeow, S

InAs/GaAs self-organized quantum dots on (4 1 1)A GaAs by molecular beam epitaxy Journal Article

In: Journal of Crystal Growth, vol. 227-228, pp. 1010-1015, 2001, ISSN: 00220248, (cited By 13; Conference of 11th International Conference on Molecular Beam Epitaxy ; Conference Date: 11 September 2000 Through 15 September 2000; Conference Code:58293).

Abstract | Links

24.

Kiravittaya, S; Manmontri, U; Sopitpan, S; Ratanathammaphan, S; Antarasen, C; Sawadsaringkarn, M; Panyakeow, S

AlGaAs/GaAs/InGaAs composite MQW structures for photovoltaic applications Journal Article

In: Solar Energy Materials and Solar Cells, vol. 68, no. 1, pp. 89-95, 2001, ISSN: 09270248, (cited By 10).

Abstract | Links