@article{Zon2021,

title = {Investigation of hybrid InSb and GaSb quantum nanostructures},

author = {Zon and T Korkerdsantisuk and A Sangpho and S Thainoi and U Prasatsap and S Kiravittaya and N Thornyanadacha and A Tandaechanurat and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85097898709&doi=10.1016%2fj.mee.2020.111494&partnerID=40&md5=849c53b696aaff87b8aa000f5a7cbdb3},

doi = {10.1016/j.mee.2020.111494},

issn = {01679317},

year  = {2021},

date = {2021-01-01},

journal = {Microelectronic Engineering},

volume = {237},

publisher = {Elsevier B.V.},

abstract = {Hybrid InSb and GaSb nanostructures (NSs) with different repeated cycles; one, two and four, are inserted in double AlGaAs/GaAs heterostructures by molecular beam epitaxy in Stranski-Krastanov mode. Their morphologies and cross-sectional structure are inspected by atomic force microscopy and transmission electron microscopy. Raman spectroscopy reveals the effect of strains produced by the presence of InSb and GaSb NSs. Optical properties of hybrid InSb and GaSb NSs are investigated by power- and temperature-dependent photoluminescence (PL) spectroscopy. Broad and strong PL emission of hybrid NSs are observed from 20 K to room temperature. The Ohmic contacts are performed by gold alloys metallization and gold bonding on the p-n heterojunction devices for electrical current density-voltage characterization of the devices. Photovoltaic effect of hybrid quantum NS-devices with different NS-cycles are tested and recorded under various illumination intensities. Spectral response at long wavelength in infrared region beyond 1 μm originated from the presence of hybrid NSs is detected. © 2020 Elsevier B.V.},

note = {cited By 0},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Chikumpa2020,

title = {Raman peak shifts by applied magnetic field in InSb/AlxIn1−xSb superlattices},

author = {M Chikumpa and Zon and S Thainoi and S Kiravittaya and A Tandaechanurat and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85095443053&doi=10.1088%2f2053-1591%2fabbded&partnerID=40&md5=af17ec520fd0c3b6962dd0d41f7d31e5},

doi = {10.1088/2053-1591/abbded},

issn = {20531591},

year  = {2020},

date = {2020-01-01},

journal = {Materials Research Express},

volume = {7},

number = {10},

publisher = {IOP Publishing Ltd},

abstract = {InSb/Alxln1−xSb superlattices (SLs) are grown by molecular beam epitaxy on (001) InSb substrate and Raman scattering spectroscopy of the samples under magnetic field is investigated. Al contents in AlInSb of the samples are varied. All samples are characterized by atomic force microscopy (AFM), X-ray diffraction and Raman scattering spectroscopy. The Raman spectroscopy is done by using excitation laser with 633 nm wavelength and 2 μm beam spot under applied magnetic field from 0 to 170 mT. Both TO and LO Raman peaks from InSb are detected from all samples. There are Raman peak shift of both TO and LO by applied magnetic field. Stronger magnetic effect is found in LO than TO phonon modes. We attribute this effect to the symmetry breaking of the InSb/AlInSb interfaces since the observed roughness of the top InSb layer can qualitatively correlate with the shift. © 2020 The Author(s). Published by IOP Publishing Ltd},

note = {cited By 0},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Rongrueangkul2020,

title = {Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy},

author = {K Rongrueangkul and P Srisinsuphya and S Thainoi and S Kiravittaya and N Nuntawong and N Thornyanadacha and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and A Tandaechanurat and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85073939493&doi=10.1002%2fpssb.201900374&partnerID=40&md5=34ed81ba697a222211525ff20e5a1904},

doi = {10.1002/pssb.201900374},

issn = {03701972},

year  = {2020},

date = {2020-01-01},

journal = {Physica Status Solidi (B) Basic Research},

volume = {257},

number = {2},

publisher = {Wiley-VCH Verlag},

abstract = {The dimensions and morphologies of quantum nanostructures are keys to controlling an operating wavelength to a desirable wavelength range due to the quantum effect. The dimension and morphology evolutions of InSb/InAs quantum nanostructures grown by molecular beam epitaxy with respect to the number of InSb monolayers (MLs) are investigated. The formation of the quantum nanostructures is dominated by lateral growth, in which the morphology is further elongated as the number of MLs is increased. Such an anisotropic growth is explained by the difference in the surface energy along each direction, which corresponds to different atomic arrangements in the crystalline structure of InSb. Cross-sectional transmission electron microscopic images show a reduction in the lateral dimension and an increase in the height of the embedded InSb quantum nanostructures when they are embedded in the InAs matrix. The results herein provide a means for obtaining the precise control over dimensions and morphologies of the InSb/InAs nanostructures, which is essential for extending the operating wavelength further into the mid-infrared region. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},

note = {cited By 0},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zon2019a,

title = {Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates},

author = {Zon and S Thainoi and S Kiravittaya and A Tandaechanurat and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow and Y Ota and S Iwamoto and Y Arakawa},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85071276629&doi=10.1063%2f1.5097261&partnerID=40&md5=bef9e28bd89a90e4e5985d4c8d55b84e},

doi = {10.1063/1.5097261},

issn = {00218979},

year  = {2019},

date = {2019-01-01},

journal = {Journal of Applied Physics},

volume = {126},

number = {8},

publisher = {American Institute of Physics Inc.},

abstract = {In this work, we use photoluminescence (PL) spectroscopy to investigate how self-assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier transfer (i.e., carrier recombination in QDs and escape through the barrier layer) is investigated as a function of excitation-power- and temperature-dependent PL measurements. A drastic blueshift of the QD peak energy from 1.23 to 1.30 eV and a further shift to 1.33 eV reveal the influence of the GaSb growth rate and the growth temperature on the optical properties of these QDs. The thermal activation energy is extracted from the temperature-dependent PL by fitting the integrated PL intensity of the QD peaks to the Arrhenius relation. The QDs grown at the growth rate of 0.1 monolayers/s at 450 °C have higher thermal activation energy (109 meV) than those grown at a lower growth rate and higher QD growth temperature. The observed PL characteristics are discussed in terms of QD size, uniformity of QDs, and material intermixing occurring during QD growth on the buffer layer and capping layer. © 2019 Author(s).},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Srisinsuphya2019,

title = {InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength},

author = {P Srisinsuphya and K Rongrueangkul and R Khanchaitham and S Thainoi and S Kiravittaya and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and A Tandaechanurat and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062228511&doi=10.1016%2fj.jcrysgro.2019.02.062&partnerID=40&md5=340a9226777c2d049a0a162df69bbf60},

doi = {10.1016/j.jcrysgro.2019.02.062},

issn = {00220248},

year  = {2019},

date = {2019-01-01},

journal = {Journal of Crystal Growth},

volume = {514},

pages = {36-39},

publisher = {Elsevier B.V.},

abstract = {Distinct InSb/InAs quantum nano-stripes possessing type-II band alignment with a broken gap are grown using molecular beam epitaxy with low substrate temperature and slow growth rate, aiming for light emission in a mid-infrared range. The quantum nano-stripes are shown to emit light at a wavelength of 3.1 µm. The excitation power dependence of photoluminescence spectra from the quantum nano-stripes reveals a clear linear blueshift with the third root of the excitation power, which is a unique property of the quantum nanostructures with type-II band alignment. The demonstrated mid-infrared light emission from the InSb/InAs quantum nano-stripes would offer a promising pathway for realizing practical, highly-efficient, and room-temperature-operating mid-infrared light sources and detectors. © 2019 Elsevier B.V.},

note = {cited By 2},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zon2019b,

title = {Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate},

author = {Zon and S Thainoi and S Kiravittaya and A Tandaechanurat and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061527393&doi=10.1016%2fj.jcrysgro.2019.02.015&partnerID=40&md5=58e0e65fbdee217951526b20093085ff},

doi = {10.1016/j.jcrysgro.2019.02.015},

issn = {00220248},

year  = {2019},

date = {2019-01-01},

journal = {Journal of Crystal Growth},

volume = {512},

pages = {136-141},

publisher = {Elsevier B.V.},

abstract = {The effects of growth temperature, growth rate and local growth position on the morphology of self-assembled InSb/GaAs quantum dots (QDs) on (0 0 1) Ge substrate are investigated. It is found that for low growth rates, anti-phase domain (APD) boundaries formed during the growth of GaAs on Ge can effectively act as the preferential nucleation position of InSb QDs. For high growth rates, InSb/GaAs QDs nucleate on both the APD boundary and the APD surface, leading to high density-InSb QDs. The QD morphologies on the APD boundary and the APD surface are distinctly different. The roles of growth rate and local growth position on the morphology of realized QDs are described. By varying the growth conditions, low density and locally aligned QDs as well as high density InSb QDs can be obtained. © 2019},

note = {cited By 0},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Lekwongderm2019,

title = {Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field},

author = {P Lekwongderm and R Chumkaew and S Thainoi and S Kiravittaya and A Tandaechanurat and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061693748&doi=10.1016%2fj.jcrysgro.2019.02.033&partnerID=40&md5=c9f2956e9c12372286a99fceaa0503bf},

doi = {10.1016/j.jcrysgro.2019.02.033},

issn = {00220248},

year  = {2019},

date = {2019-01-01},

journal = {Journal of Crystal Growth},

volume = {512},

pages = {198-202},

publisher = {Elsevier B.V.},

abstract = {We report on the Raman spectroscopy of self-assembled InSb nano-stripes grown on (0 0 1) GaSb substrate by molecular beam epitaxy. The nano-stripes have a truncated pyramidal shape with the typical dimension of ∼150 × 200 × 25 nm 3 . Raman spectroscopy is applied to probe the phonon-related properties of the InSb nano-stripes. Raman spectroscopy shows slight redshifts of the InSb-related phonon peaks when the excitation wavelength is increased. When a magnetic field is applied, blueshifts of these peaks are observed. Transmission electron microscopy is utilized to relate the structural information of the InSb nano-stripes and their Raman properties. © 2019},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Chevuntulak2019,

title = {Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells},

author = {C Chevuntulak and T Rakpaises and N Sridumrongsak and S Thainoi and S Kiravittaya and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and A Tandaechanurat and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061674884&doi=10.1016%2fj.jcrysgro.2019.02.031&partnerID=40&md5=dfa591a95890f7fb57db81c384058dba},

doi = {10.1016/j.jcrysgro.2019.02.031},

issn = {00220248},

year  = {2019},

date = {2019-01-01},

journal = {Journal of Crystal Growth},

volume = {512},

pages = {159-163},

publisher = {Elsevier B.V.},

abstract = {Interdigitated quantum dots, which are multiple stacks of type-I InAs/GaAs quantum dots and type-II GaSb/GaAs quantum dots, are grown using molecular beam epitaxy. By incorporating the interdigitated quantum dots into a p-i-n AlGaAs/GaAs heterojunction solar cell structure, we demonstrate a photovoltaic effect with a 20.6% improvement in open-circuit voltage, when compared to that of another cell incorporating the same quantum dots but with a p-i-n GaAs homojunction architecture. A transmission electron microscopy is performed to analyze strain-induced defects created in the multi-stack quantum dot structures. The heterojunction solar cell incorporating the interdigitated quantum dots realized in this work would find potential applications in high-efficiency single-junction intermediate band solar cells operating under concentrated sunlight. © 2019 Elsevier B.V.},

note = {cited By 1},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Posri2019,

title = {Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy},

author = {S Posri and S Thainoi and S Kiravittaya and A Tandaechanurat and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85054885756&doi=10.1002%2fpssa.201800498&partnerID=40&md5=c3bd9d906a071150f51c67014064263e},

doi = {10.1002/pssa.201800498},

issn = {18626300},

year  = {2019},

date = {2019-01-01},

journal = {Physica Status Solidi (A) Applications and Materials Science},

volume = {216},

number = {1},

publisher = {Wiley-VCH Verlag},

abstract = {In this study, the growth and photoluminescence (PL) properties of InSb/GaSb nano-stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high-energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski–Krastanov mode and results in nano-stripe formation. The obtained nano-stripes have rectangular-based structure with the height of 25.2 ± 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano-stripes shows the emission peak at ≈1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of ≈0.24 in nominally grown InSb/GaSb nano-stripe is estimated. Power-dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of ≈20 meV from InSb nano-stripe emission is extracted from the temperature-dependent PL spectroscopy. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},

note = {cited By 2},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zon2019,

title = {Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy},

author = {Zon and P Phienlumlert and S Thainoi and S Kiravittaya and A Tandaechanurat and N Nuntawong and S Sopitpan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow and Y Ota and S Iwamoto and Y Arakawa},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85054573343&doi=10.1002%2fpssa.201800499&partnerID=40&md5=03f4c06b9d368e1049355d20d0bdcd63},

doi = {10.1002/pssa.201800499},

issn = {18626300},

year  = {2019},

date = {2019-01-01},

journal = {Physica Status Solidi (A) Applications and Materials Science},

volume = {216},

number = {1},

publisher = {Wiley-VCH Verlag},

abstract = {Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},

note = {cited By 4},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Narabadeesuphakorn2018,

title = {Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties},

author = {P Narabadeesuphakorn and S Thainoi and A Tandaechanurat and S Kiravittaya and N Nuntawong and S Sopitopan and V Yordsri and C Thanachayanont and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042190688&doi=10.1016%2fj.jcrysgro.2018.01.030&partnerID=40&md5=24d51889bcf6105d693b0d9f5a69b87e},

doi = {10.1016/j.jcrysgro.2018.01.030},

issn = {00220248},

year  = {2018},

date = {2018-01-01},

journal = {Journal of Crystal Growth},

volume = {487},

pages = {40-44},

publisher = {Elsevier B.V.},

abstract = {Growth of InSb/GaAs quantum nanostructures on GaAs substrate by using molecular beam epitaxy with low growth temperature and slow growth rate typically results in a mixture of isolated and paired nano-stripe structures, which are termed as single and twin nano-stripes, respectively. In this work, we investigate the growth conditions to maximize the number ratio between twin and single nano-stripes. The highest percentage of the twin nano-stripes of up to 59% was achieved by optimizing the substrate temperature and the nano-stripe growth rate. Transmission electron microscopy reveals the substantial size and height reduction of the buried nano-stripes. We also observed the Raman shift and photon emission from our twin nano-stripes. These twin nano-stripes are promising for spintronics and quantum computing devices. © 2018 Elsevier B.V.},

note = {cited By 5},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Thainoi2017,

title = {Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures},

author = {S Thainoi and S Kiravittaya and T Poempool and Zon and N Nuntawong and S Sopitpan and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85010189136&doi=10.1016%2fj.jcrysgro.2017.01.011&partnerID=40&md5=8ac8c045bcb517b94f88d6fd9d75d1db},

doi = {10.1016/j.jcrysgro.2017.01.011},

issn = {00220248},

year  = {2017},

date = {2017-01-01},

journal = {Journal of Crystal Growth},

volume = {477},

pages = {30-33},

publisher = {Elsevier B.V.},

abstract = {InSb/GaAs nanostructures grown by solid-source molecular beam epitaxy are investigated in this work. Three-dimensional dot-like InSb nanostructures are obtained by self-assembled growth at relatively low growth temperatures (250–300 °C) with slow InSb growth rate. Nanostructure base is typically elongated. Facet analysis of the free-standing InSb nanostructure grown at 250 °C shows that each nanostructure has flat top (001) surface while side facets are along <11n> directions. In contrast, InSb nanostructures grown at higher temperature show rather smooth surfaces. Analysis of their size distributions shows that the size inhomogeneity increases with the growth temperature. Moreover, Raman spectroscopy reveals both InSb-related peaks at 181 and 189 cm−1 and GaAs-related peaks at 268 and 293 cm−1. Raman spectroscopy with different excitation wavelengths is applied to probe residual strain in subsurface GaAs layer. © 2017 Elsevier B.V.},

note = {cited By 7},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Thainoi2017a,

title = {Growth of truncated pyramidal InSb nanostructures on GaAs substrate},

author = {S Thainoi and S Kiravittaya and T Poempool and Zon and S Sopitpan and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85009945358&doi=10.1016%2fj.jcrysgro.2016.11.093&partnerID=40&md5=097da5f0c36275c55c6370831e201de5},

doi = {10.1016/j.jcrysgro.2016.11.093},

issn = {00220248},

year  = {2017},

date = {2017-01-01},

journal = {Journal of Crystal Growth},

volume = {468},

pages = {737-739},

publisher = {Elsevier B.V.},

abstract = {Growth and structural characterization of InSb nanostructures formed on GaAs is presented. Saturated InSb nanostructure have a truncated pyramidal shape with rectangular base. In addition, some InSb nanostructures have twin truncated pyramidal configurations. The twin truncated pyramids align in parallel with each other and along [110] direction. We attribute the formation of rectangular base to the growth of highly mismatched InSb/GaAs system while the formation of twin configuration due to the nucleation of InSb islands on top of two-dimensional InSb plateau. The latter is suggested by an observation on the initial state of InSb nanostructure formation. © 2016 Elsevier B.V.},

note = {cited By 6},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zon2017,

title = {Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate},

author = {Zon and T Poempool and S Kiravittaya and S Sopitpan and S Thainoi and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006981077&doi=10.1016%2fj.jcrysgro.2016.11.017&partnerID=40&md5=c22a57d3f971e5a2c5bbcb09d988e61e},

doi = {10.1016/j.jcrysgro.2016.11.017},

issn = {00220248},

year  = {2017},

date = {2017-01-01},

journal = {Journal of Crystal Growth},

volume = {468},

pages = {541-546},

publisher = {Elsevier B.V.},

abstract = {In this work, we report on the growth of self-assembled InSb/GaAs quantum dots (QDs) on (001) Ge substrate by molecular beam epitaxy. Due to the polar/non-polar nature of GaAs grown on Ge, antiphase domains are formed. Effects of the domain and QD growth temperature on the morphology of realized QDs are presented. InSb QDs are mostly formed at the antiphase-domain boundaries (APBs). The QD size, shape and density are varied with the QD growth temperature. These free-standing QDs have irregular lens and stripe-shapes with 10n side facets according to the analysis of atomic force microscopy images. InSb QDs is formed at the APBs, where two orthogonal GaAs surfaces are met. © 2016 Elsevier B.V.},

note = {cited By 2},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zon2016,

title = {Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate},

author = {Zon and T Poempool and S Kiravittaya and N Nuntawong and S Sopitpan and S Thainoi and S Kanjanachuchai and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978998455&doi=10.1007%2fs13391-016-4016-x&partnerID=40&md5=8a3940d683a94fdcad4b59e626954f77},

doi = {10.1007/s13391-016-4016-x},

issn = {17388090},

year  = {2016},

date = {2016-01-01},

journal = {Electronic Materials Letters},

volume = {12},

number = {4},

pages = {517-523},

publisher = {Kluwer Academic Publishers},

abstract = {We investigate structural Raman and photoluminescence properties of type II GaSb/GaAs quantum dots (QDs) grown on (001) Ge substrate by molecular beam epitaxy. Array of self-assembled GaSb QDs having an areal density of ∼1.66 × 1010 dots/cm2 is obtained by a growth at relatively low substrate temperature (450 °C) on a GaAs surface segmented into anti-phase domains (APDs). Most of QDs form in one APD area. However, a few QDs can be observed at the APD boundaries. Raman spectroscopy is used to probe the strain in GaAs layer. Slight redshift of both LO and TO GaAs peaks are observed when GaSb QDs are buried into GaAs matrix. Optical properties of capped QDs are characterized by photoluminescence measurement at low temperatures (20 K and 30 K). Emission peaks of GaSb/GaAs QDs are found in the range of 1.0-1.3 eV at both temperatures. Slight redshift is observed when the laser excitation power is increased at 20 K while blueshift of QD peak is observed at 30 K. We attribute this abnormal behavior to the contribution of overlapped GaSb wetting layer peak in the PL emission as well as the feature of type II band structure. [Figure not available: see fulltext.] © 2016, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.},

note = {cited By 6},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Khoklang2015a,

title = {Molecular beam epitaxial growth of GaSb quantum dots on (0 0 1) GaAs substrate with InGaAs insertion layer},

author = {K Khoklang and S Kiravittaya and M Kunrugsa and P Prongjit and S Thainoi and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84979959088&doi=10.1016%2fj.jcrysgro.2015.02.044&partnerID=40&md5=7cf71b7ba20245860fae84a168b8ec2e},

doi = {10.1016/j.jcrysgro.2015.02.044},

issn = {00220248},

year  = {2015},

date = {2015-01-01},

journal = {Journal of Crystal Growth},

volume = {425},

pages = {291-294},

publisher = {Elsevier B.V.},

abstract = {We report on the molecular beam epitaxial growth of self-assembled GaSb quantum dots (QDs) on (0 0 1) GaAs substrates with an insertion layer. The insertion layer, which is a 4-monolayers (MLs) InxGa1-xAs (x=0.00, 0.07, 0.15, 0.20 and 0.25), is grown prior to the QD growth. With this InGaAs insertion layer, the obtained QD density decreases substantially, while the QD height and diameter increase as compared with typical GaSb QDs grown on conventional (0 0 1) GaAs surface under the same growth condition. The GaSb QDs on GaAs have the dome shape with elliptical base and the elongation direction of the base is along the [1 1 0] direction. When the InGaAs insertion layer is introduced, the distinct elongation disappears and the QD sidewall shows facet-related surfaces with (0 0 1) plateau on top. © 2015 Elsevier B.V. All rights reserved.},

note = {cited By 3},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kunrugsa2014,

title = {Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates},

author = {M Kunrugsa and S Kiravittaya and S Sopitpan and S Ratanathammaphan and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906958887&doi=10.1016%2fj.jcrysgro.2014.02.048&partnerID=40&md5=8e717ba4bf17866659316fe19a1a3fcd},

doi = {10.1016/j.jcrysgro.2014.02.048},

issn = {00220248},

year  = {2014},

date = {2014-01-01},

journal = {Journal of Crystal Growth},

volume = {401},

pages = {441-444},

publisher = {Elsevier B.V.},

abstract = {We perform structural and optical investigations of GaSb/GaAs quantum dots (QDs) grown on Ge (001) substrates by molecular beam epitaxy. Anti-phase domains (APDs) of GaAs are distributed on Ge substrate after the growth of GaAs due to the growth nature of III-V compound on group IV semiconductors having polar and non-polar behaviors. The APDs affect the QD growth as demonstrated by the growth of conventional InAs QDs on this surface. For GaSb QDs, the GaSb layer is grown on GaAs APD surface and compared with the GaSb layer on conventional (001) GaAs surface. Self-assembled QDs are formed on both surfaces but structural analysis reveals evidence of shape and size differences, which is attributed to the influence of the initial surface. Photoluminescence of GaSb/GaAs QDs grown on both Ge and GaAs substrates is studied. Emission from GaSb/GaAs QDs on Ge substrate can be detected till near room temperature (270 K). © 2014 Elsevier B.V.},

note = {cited By 12},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kunrugsa2014a,

title = {Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxy},

author = {M Kunrugsa and S Kiravittaya and S Panyakeow and S Ratanathammaphan},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84917689862&doi=10.1016%2fj.jcrysgro.2014.06.036&partnerID=40&md5=582d93300d0ea83a9c3bca6e16e0218d},

doi = {10.1016/j.jcrysgro.2014.06.036},

issn = {00220248},

year  = {2014},

date = {2014-01-01},

journal = {Journal of Crystal Growth},

volume = {402},

pages = {285-290},

publisher = {Elsevier},

abstract = {We investigate the effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxy on GaAs (001) substrates. Ga deposition rate was varied to form the different size and density of Ga droplets. After the droplets were exposed to Sb flux, not only the GaSb ring structure but also the complex nanostructure like the GaSb ring structure surrounded by ring-shaped dot molecules were obtained. A simple descriptive model is proposed to describe formation mechanisms of these nanostructures. It is found that Ga droplet size, distance between Ga droplets and diffusion area of Ga atoms during crystallization with Sb flux are all the crucial factors which determine the shape of GaSb nanostructures. Due to a lattice mismatch between GaSb and GaAs, strain occurred during a crystallization process should also be taken into account. Photoluminescence was carried out to verify our model. © 2014 Elsevier B.V.},

note = {cited By 6},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Boonpeng2013,

title = {InGaAs quantum-dot-in-ring structure by droplet epitaxy},

author = {P Boonpeng and S Kiravittaya and S Thainoi and S Panyakeow and S Ratanathammaphan},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84885431768&doi=10.1016%2fj.jcrysgro.2012.12.056&partnerID=40&md5=626557246136c6375e9161a6971f0994},

doi = {10.1016/j.jcrysgro.2012.12.056},

issn = {00220248},

year  = {2013},

date = {2013-01-01},

journal = {Journal of Crystal Growth},

volume = {378},

pages = {435-438},

publisher = {Elsevier B.V.},

abstract = {The controlled fabrication of self-assembled InGaAs nanostructures i.e., quantum ring (QR) and quantum-dot-in-ring (QDIR) by droplet epitaxy is reported. The effects of crystallization temperature (170-260 1°C) on the nanostructure shape, dimension, density, and depth profile are investigated. The QRs transform to QDIRs when the crystallization temperature is increased. At transformation state, the QRs with distorted nanohole profile along the [1-10] crystallographic direction are observed. The formation mechanism can be explained by the competitive crystallizations in and around the nanodroplet and strain relaxation in the nanohole. © 2013 Elsevier B.V. All rights reserved.},

note = {cited By 11},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kiravittaya2003,

title = {Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching},

author = {S Kiravittaya and R Songmuang and N Y Jin-Phillipp and S Panyakeow and O G Schmidt},

editor = {Tu C W Harris J.S. Miller D.L.},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037380594&doi=10.1016%2fS0022-0248%2802%2902475-2&partnerID=40&md5=7244fb8e45d78f5beb5835a2663f88c6},

doi = {10.1016/S0022-0248(02)02475-2},

issn = {00220248},

year  = {2003},

date = {2003-01-01},

journal = {Journal of Crystal Growth},

volume = {251},

number = {1-4},

pages = {258-263},

address = {San Francisco, CA},

abstract = {We present a systematic study of nanoholes formation on top of capped InAs quantum dots (QDs) by using AsBr3 in situ etching. The etching process can be divided into two regimes depending on the nominal etching depth and the thickness of the GaAs cap layer. In the first regime, 6-nm deep and 50-nm wide nanoholes are formed, which we ascribe to a strain selectivity of the etchant. Further supply of the etching gas causes the hole diameter to increase, while the depth stays approximately constant. Photoluminescence (PL) was used to confirm the removal of the buried InAs QDs during etching. The holes can be overgrown with InAs such that an atomically flat surface is recovered. Further InAs deposited on the filled-hole layer forms into pairs of self-assembled QDs - so-called lateral QD bi-molecules. These QD bi-molecules show narrow and intense PL signal at room temperature. © 2003 Elsevier Science B.V. All rights reserved.},

note = {cited By 28; Conference of Proceedings of the Molecular Beam Epitaxy 2002 ; Conference Date: 15 September 2002 Through 20 September 2002; Conference Code:60890},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Songmuang2003,

title = {Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dots},

author = {R Songmuang and S Kiravittaya and M Sawadsaringkarn and S Panyakeow and O G Schmidt},

editor = {Tu C W Harris J.S. Miller D.L.},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037380527&doi=10.1016%2fS0022-0248%2802%2902474-0&partnerID=40&md5=178de30fa2b93d18df97fd2184374680},

doi = {10.1016/S0022-0248(02)02474-0},

issn = {00220248},

year  = {2003},

date = {2003-01-01},

journal = {Journal of Crystal Growth},

volume = {251},

number = {1-4},

pages = {166-171},

address = {San Francisco, CA},

abstract = {We use photoluminescence (PL) to compare large low-density and small high-density self-assembled InAs/GaAs quantum dots (QDs) - capped at low and high temperatures. The low-temperature capped QDs show an improved PL linewidth of 23-26meV, which is caused by an improvement of size and composition homogeneity of buried QDs due to suppressed material intermixing. The improvement is more pronounced for the small QDs. Excitation power and temperature-dependent PL are performed for all different QD types. © 2003 Elsevier Science B.V. All rights reserved.},

note = {cited By 33; Conference of Proceedings of the Molecular Beam Epitaxy 2002 ; Conference Date: 15 September 2002 Through 20 September 2002; Conference Code:60890},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Schmidt2002,

title = {Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes},

author = {O G Schmidt and Ch. Deneke and S Kiravittaya and R Songmuang and H Heidemeyer and Y Nakamura and R Zapf-Gottwick and C Müller and N Y Jin-Phillipp},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036765699&doi=10.1109%2fJSTQE.2002.804235&partnerID=40&md5=b7529e21245ac9df78f7b580c1719284},

doi = {10.1109/JSTQE.2002.804235},

issn = {1077260X},

year  = {2002},

date = {2002-01-01},

journal = {IEEE Journal on Selected Topics in Quantum Electronics},

volume = {8},

number = {5},

pages = {1025-1034},

abstract = {We present a detailed investigation of novel strain-driven semiconductor nanostructures. Our examinations include self-assembled nanoholes, lateral quantum-dot (QD) molecules, and rolled-up nanotubes. We overgrow InAs QDs with GaAs and apply atomically precise in situ etching to fabricate homogeneous arrays of nanometer-sized holes with diameters of 40 to 60 nm and depths up to 6.2 nm. The structural properties of the nanoholes can be precisely tuned by changing the QD capping thickness and the in situ etching time. We show that strain fields surrounding the buried quantum dots drive the nanohole formation process. We overgrow the nanoholes with 0.2- to 2.5-ML InAs and observe the formation of compact lateral InAs QD molecules. The number of QDs involved in a lateral QD molecule can be tuned from two to six by changing the growth temperature. Our systematic photoluminescence study documents the QD molecule formation process step by step and helps to interpret our structural results. We also present the fabrication of laterally aligned lateral QD bimolecules by growing InGaAs on a GaAs (001) substrate patterned with a square array of nanometer sized holes. Charge carriers in such bimolecules might serve as quantum gates in a future semiconductor based quantum computer. Furthermore, we release strained semiconductor bilayers from their surface to fabricate individual rolled-up semiconductor micro- and nanotubes. We control the diameter of strain-driven In(Ga)As-GaAs tubes from the nanometer to micrometer range by simply changing the layer thicknesses and built-in strain. We propose to roll in metal strip lines to fabricate nanocoils and nanotransformers. To support our proposition, we fabricate homogeneous single and twin GaInP tubes. We present a straight GaInP microtube of more than 2 mm in length and a length-to-diameter ratio of about 2000, thus, elucidating the great potential of this technology.},

note = {cited By 95},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kiravittaya2001,

title = {InAs/GaAs self-organized quantum dots on (4 1 1)A GaAs by molecular beam epitaxy},

author = {S Kiravittaya and R Songmuang and P Changmuang and S Sopitpan and S Ratanathammaphan and M Sawadsaringkarn and S Panyakeow},

editor = {Tu C W Kong M.},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035398657&doi=10.1016%2fS0022-0248%2801%2900978-2&partnerID=40&md5=a7aa51d7eedc1ce9b5de916f1d360468},

doi = {10.1016/S0022-0248(01)00978-2},

issn = {00220248},

year  = {2001},

date = {2001-01-01},

journal = {Journal of Crystal Growth},

volume = {227-228},

pages = {1010-1015},

address = {Bijing},

abstract = {Self-organized InAs QDs formation on (4 1 1)A GaAs and on controlled (1 0 0) GaAs substrates were studied by in-situ RHEED observation, AFM measurement and PL spectroscopy. The transition from two-dimensional to three-dimensional growth on (4 1 1)A was observed by RHEED pattern transformation to indicate the critical layer thickness of InAs QDs formation. The result is almost the same as that on (1 0 0). Improvement of QDs alignment having dot size uniformity on (4 1 1)A was observed by AFM measurement. Enhanced optical properties of QDs on (4 1 1)A was shown by low-temperature PL spectroscopy. Strong PL peak at 966 nm having FWHM of 35 nm was obtained from the 3-stacked QDs on (4 1 1)A. The narrower PL FWHM of QDs peak on (4 1 1)A comes from the improved uniformity of QDs on (4 1 1)A. © 2001 Elsevier Science B.V.},

note = {cited By 13; Conference of 11th International Conference on Molecular Beam Epitaxy ; Conference Date: 11 September 2000 Through 15 September 2000; Conference Code:58293},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Kiravittaya2001a,

title = {AlGaAs/GaAs/InGaAs composite MQW structures for photovoltaic applications},

author = {S Kiravittaya and U Manmontri and S Sopitpan and S Ratanathammaphan and C Antarasen and M Sawadsaringkarn and S Panyakeow},

url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034826290&doi=10.1016%2fS0927-0248%2800%2900347-0&partnerID=40&md5=0b91108643e1322805ad48e2eb71af19},

doi = {10.1016/S0927-0248(00)00347-0},

issn = {09270248},

year  = {2001},

date = {2001-01-01},

journal = {Solar Energy Materials and Solar Cells},

volume = {68},

number = {1},

pages = {89-95},

abstract = {AlGaAs/GaAs/InGaAs composite MQW structures were theoretically studied and simulated. The computer simulation indicated that an appropriate composite MQW, both with symmetrical and non-symmetrical structures, could keep |ψ|2 of quantized carriers at proper locations in electric-field-tilted quantum wells, so the efficient transition by photon absorption would be possible and applicable for photovoltaic cells which have the composite MQW as the active region. The AlGaAs/GaAs MQW and GaAs/InGaAs (4x) SQW structures were separately prepared by MBE and were evaluated for their spectral responses. The AlGaAs/GaAs MQW has a high response at a short wavelengths (peak at 685 nm) due to the quantized states in GaAs wells, while the GaAs/InGaAs SQW has a broader spectral response covering longer wavelengths (600-850 nm) because of the strong absorption in the GaAs barrier and substrate. However, (4x) photoluminescence peaks at 900-1100 nm that were found from GaAs/InGaAs strained quantum wells at room temperature are promising evidence for the longer wavelength spectral response. The AlGaAs/GaAs/InGaAs composite SQW and MQW samples were experimentally prepared by MBE techniques and tested for their optical properties. The broader photoluminescence peak was observed and reflected the nature of the composite structure. The study on the photospectral response of composite MQW structures has been conducted which provides the basic information for high performance solar cell design.},

note = {cited By 10},

keywords = {},

pubstate = {published},

tppubtype = {article}

}