Professor Somsak Panyakeow, D. Eng.

ศ. ดร.สมศักดิ์ ปัญญาแก้ว

Education

  • D. Eng.   (Electrical), Osaka University, Japan.1974
  • M. Eng. (Electrical), Osaka University, Japan.1971
  • B. Eng.  (Electrical), Osaka University, Japan.1969

Email: Somsak.P@chula.ac.th

Research Interest

  • Solar Cells and Photovoltaic Applications
  • Laser Engineering
  • Optoelectronics
  • Quantum Devices and Nanoelectronics

Research Cluster

88 entries « 1 of 4 »
1.

Himwas, C; Kijamnajsuk, S; Yordsri, V; Thanachayanont, C; Wongpinij, T; Euaruksakul, C; Panyakeow, S; Kanjanachuchai, S

Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001) Journal Article

In: Semiconductor Science and Technology, 36 (4), 2021, ISSN: 02681242, (cited By 0).

Abstract | Links

2.

Zon,; Korkerdsantisuk, T; Sangpho, A; Thainoi, S; Prasatsap, U; Kiravittaya, S; Thornyanadacha, N; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Investigation of hybrid InSb and GaSb quantum nanostructures Journal Article

In: Microelectronic Engineering, 237 , 2021, ISSN: 01679317, (cited By 0).

Abstract | Links

3.

Chikumpa, M; Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Raman peak shifts by applied magnetic field in InSb/AlxIn1−xSb superlattices Journal Article

In: Materials Research Express, 7 (10), 2020, ISSN: 20531591, (cited By 0).

Abstract | Links

4.

Himwas, C; Soison, A; Kijamnajsuk, S; Wongpinij, T; Euaraksakul, C; Panyakeow, S; Kanjanachuchai, S

GaAsPBi epitaxial layer grown by molecular beam epitaxy Journal Article

In: Semiconductor Science and Technology, 35 (9), 2020, ISSN: 02681242, (cited By 1).

Abstract | Links

5.

Rongrueangkul, K; Srisinsuphya, P; Thainoi, S; Kiravittaya, S; Nuntawong, N; Thornyanadacha, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (B) Basic Research, 257 (2), 2020, ISSN: 03701972, (cited By 0).

Abstract | Links

6.

Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S; Ota, Y; Iwamoto, S; Arakawa, Y

Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates Journal Article

In: Journal of Applied Physics, 126 (8), 2019, ISSN: 00218979, (cited By 1).

Abstract | Links

7.

Srisinsuphya, P; Rongrueangkul, K; Khanchaitham, R; Thainoi, S; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength Journal Article

In: Journal of Crystal Growth, 514 , pp. 36-39, 2019, ISSN: 00220248, (cited By 2).

Abstract | Links

8.

Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate Journal Article

In: Journal of Crystal Growth, 512 , pp. 136-141, 2019, ISSN: 00220248, (cited By 0).

Abstract | Links

9.

Lekwongderm, P; Chumkaew, R; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field Journal Article

In: Journal of Crystal Growth, 512 , pp. 198-202, 2019, ISSN: 00220248, (cited By 1).

Abstract | Links

10.

Chevuntulak, C; Rakpaises, T; Sridumrongsak, N; Thainoi, S; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells Journal Article

In: Journal of Crystal Growth, 512 , pp. 159-163, 2019, ISSN: 00220248, (cited By 1).

Abstract | Links

11.

Posri, S; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (A) Applications and Materials Science, 216 (1), 2019, ISSN: 18626300, (cited By 2).

Abstract | Links

12.

Zon,; Phienlumlert, P; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S; Ota, Y; Iwamoto, S; Arakawa, Y

Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (A) Applications and Materials Science, 216 (1), 2019, ISSN: 18626300, (cited By 4).

Abstract | Links

13.

Vorathamrong, S; Panyakeow, S; Ratanathammaphan, S; Praserthdam, P

Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires Journal Article

In: AIP Advances, 9 (2), 2019, ISSN: 21583226, (cited By 0).

Abstract | Links

14.

Kanjanachuchai, S; Wongpinij, T; Kijamnajsuk, S; Himwas, C; Panyakeow, S; Photongkam, P

Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations Journal Article

In: Journal of Applied Physics, 123 (16), 2018, ISSN: 00218979, (cited By 1).

Abstract | Links

15.

Narabadeesuphakorn, P; Thainoi, S; Tandaechanurat, A; Kiravittaya, S; Nuntawong, N; Sopitopan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties Journal Article

In: Journal of Crystal Growth, 487 , pp. 40-44, 2018, ISSN: 00220248, (cited By 5).

Abstract | Links

16.

Thainoi, S; Kiravittaya, S; Poempool, T; Zon,; Nuntawong, N; Sopitpan, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures Journal Article

In: Journal of Crystal Growth, 477 , pp. 30-33, 2017, ISSN: 00220248, (cited By 7).

Abstract | Links

17.

Thainoi, S; Kiravittaya, S; Poempool, T; Zon,; Sopitpan, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Growth of truncated pyramidal InSb nanostructures on GaAs substrate Journal Article

In: Journal of Crystal Growth, 468 , pp. 737-739, 2017, ISSN: 00220248, (cited By 6).

Abstract | Links

18.

Zon,; Poempool, T; Kiravittaya, S; Sopitpan, S; Thainoi, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate Journal Article

In: Journal of Crystal Growth, 468 , pp. 541-546, 2017, ISSN: 00220248, (cited By 2).

Abstract | Links

19.

Vorathamrong, S; Ratanathammaphan, S; Panyakeow, S; Praserthdam, P; Tongyam, C

Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer Journal Article

In: Journal of Crystal Growth, 477 , pp. 217-220, 2017, ISSN: 00220248, (cited By 1).

Abstract | Links

20.

Vorathamrong, S; Panyakeow, S; Ratanathammaphan, S; Praserthdam, P; Tongyam, C

Observation of self-assisted GaAs nanowire growth by molecular beam epitaxy on GaAs (1 1 1)B without SiO2 layer Journal Article

In: Materials Research Express, 4 (9), 2017, ISSN: 20531591, (cited By 2).

Abstract | Links

21.

Zon,; Poempool, T; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Thainoi, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate Journal Article

In: Electronic Materials Letters, 12 (4), pp. 517-523, 2016, ISSN: 17388090, (cited By 6).

Abstract | Links

22.

Eiwwongcharoen, W; Nakareseisoon, N; Thainoi, S; Panyakeow, S; Kanjanachuchai, S

Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields Journal Article

In: CrystEngComm, 18 (31), pp. 5852-5859, 2016, ISSN: 14668033, (cited By 4).

Abstract | Links

23.

Trisna, B A; Nakareseisoon, N; Eiwwongcharoen, W; Panyakeow, S; Kanjanachuchai, S

Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns Journal Article

In: Nanoscale Research Letters, 10 (1), 2015, ISSN: 19317573, (cited By 8).

Abstract | Links

24.

Kanjanachuchai, S; Xu, M; Jaffré, A; Jittrong, A; Chokamnuai, T; Panyakeow, S; Boutchich, M

Excitation transfer in stacked quantum dot chains Journal Article

In: Semiconductor Science and Technology, 30 (5), pp. 1-7, 2015, ISSN: 02681242, (cited By 3).

Abstract | Links

25.

Kunrugsa, M; Tung, K H P; Danner, A J; Panyakeow, S; Ratanathammaphan, S

Fabrication of GaSb quantum rings on GaAs(0 0 1) by droplet epitaxy Journal Article

In: Journal of Crystal Growth, 425 , pp. 287-290, 2015, ISSN: 00220248, (cited By 4).

Abstract | Links

88 entries « 1 of 4 »