Professor Somsak Panyakeow, D. Eng.

ศ. ดร.สมศักดิ์ ปัญญาแก้ว

Education

  • D. Eng.   (Electrical), Osaka University, Japan.1974
  • M. Eng. (Electrical), Osaka University, Japan.1971
  • B. Eng.  (Electrical), Osaka University, Japan.1969

Email: Somsak.P@chula.ac.th

Research Interest

  • Solar Cells and Photovoltaic Applications
  • Laser Engineering
  • Optoelectronics
  • Quantum Devices and Nanoelectronics

Research Cluster

88 entries « 1 of 4 »
1.

Himwas, C; Kijamnajsuk, S; Yordsri, V; Thanachayanont, C; Wongpinij, T; Euaruksakul, C; Panyakeow, S; Kanjanachuchai, S

Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001) Journal Article

In: Semiconductor Science and Technology, vol. 36, no. 4, 2021, ISSN: 02681242, (cited By 0).

Abstract | Links

2.

Zon,; Korkerdsantisuk, T; Sangpho, A; Thainoi, S; Prasatsap, U; Kiravittaya, S; Thornyanadacha, N; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Investigation of hybrid InSb and GaSb quantum nanostructures Journal Article

In: Microelectronic Engineering, vol. 237, 2021, ISSN: 01679317, (cited By 0).

Abstract | Links

3.

Chikumpa, M; Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Raman peak shifts by applied magnetic field in InSb/AlxIn1−xSb superlattices Journal Article

In: Materials Research Express, vol. 7, no. 10, 2020, ISSN: 20531591, (cited By 0).

Abstract | Links

4.

Himwas, C; Soison, A; Kijamnajsuk, S; Wongpinij, T; Euaraksakul, C; Panyakeow, S; Kanjanachuchai, S

GaAsPBi epitaxial layer grown by molecular beam epitaxy Journal Article

In: Semiconductor Science and Technology, vol. 35, no. 9, 2020, ISSN: 02681242, (cited By 1).

Abstract | Links

5.

Rongrueangkul, K; Srisinsuphya, P; Thainoi, S; Kiravittaya, S; Nuntawong, N; Thornyanadacha, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (B) Basic Research, vol. 257, no. 2, 2020, ISSN: 03701972, (cited By 0).

Abstract | Links

6.

Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S; Ota, Y; Iwamoto, S; Arakawa, Y

Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates Journal Article

In: Journal of Applied Physics, vol. 126, no. 8, 2019, ISSN: 00218979, (cited By 1).

Abstract | Links

7.

Srisinsuphya, P; Rongrueangkul, K; Khanchaitham, R; Thainoi, S; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength Journal Article

In: Journal of Crystal Growth, vol. 514, pp. 36-39, 2019, ISSN: 00220248, (cited By 2).

Abstract | Links

8.

Zon,; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate Journal Article

In: Journal of Crystal Growth, vol. 512, pp. 136-141, 2019, ISSN: 00220248, (cited By 0).

Abstract | Links

9.

Lekwongderm, P; Chumkaew, R; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field Journal Article

In: Journal of Crystal Growth, vol. 512, pp. 198-202, 2019, ISSN: 00220248, (cited By 1).

Abstract | Links

10.

Chevuntulak, C; Rakpaises, T; Sridumrongsak, N; Thainoi, S; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Tandaechanurat, A; Panyakeow, S

Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells Journal Article

In: Journal of Crystal Growth, vol. 512, pp. 159-163, 2019, ISSN: 00220248, (cited By 1).

Abstract | Links

11.

Posri, S; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 1, 2019, ISSN: 18626300, (cited By 2).

Abstract | Links

12.

Zon,; Phienlumlert, P; Thainoi, S; Kiravittaya, S; Tandaechanurat, A; Nuntawong, N; Sopitpan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S; Ota, Y; Iwamoto, S; Arakawa, Y

Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy Journal Article

In: Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 1, 2019, ISSN: 18626300, (cited By 4).

Abstract | Links

13.

Vorathamrong, S; Panyakeow, S; Ratanathammaphan, S; Praserthdam, P

Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires Journal Article

In: AIP Advances, vol. 9, no. 2, 2019, ISSN: 21583226, (cited By 0).

Abstract | Links

14.

Kanjanachuchai, S; Wongpinij, T; Kijamnajsuk, S; Himwas, C; Panyakeow, S; Photongkam, P

Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations Journal Article

In: Journal of Applied Physics, vol. 123, no. 16, 2018, ISSN: 00218979, (cited By 1).

Abstract | Links

15.

Narabadeesuphakorn, P; Thainoi, S; Tandaechanurat, A; Kiravittaya, S; Nuntawong, N; Sopitopan, S; Yordsri, V; Thanachayanont, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties Journal Article

In: Journal of Crystal Growth, vol. 487, pp. 40-44, 2018, ISSN: 00220248, (cited By 5).

Abstract | Links

16.

Thainoi, S; Kiravittaya, S; Poempool, T; Zon,; Nuntawong, N; Sopitpan, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures Journal Article

In: Journal of Crystal Growth, vol. 477, pp. 30-33, 2017, ISSN: 00220248, (cited By 7).

Abstract | Links

17.

Thainoi, S; Kiravittaya, S; Poempool, T; Zon,; Sopitpan, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Growth of truncated pyramidal InSb nanostructures on GaAs substrate Journal Article

In: Journal of Crystal Growth, vol. 468, pp. 737-739, 2017, ISSN: 00220248, (cited By 6).

Abstract | Links

18.

Zon,; Poempool, T; Kiravittaya, S; Sopitpan, S; Thainoi, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate Journal Article

In: Journal of Crystal Growth, vol. 468, pp. 541-546, 2017, ISSN: 00220248, (cited By 2).

Abstract | Links

19.

Vorathamrong, S; Ratanathammaphan, S; Panyakeow, S; Praserthdam, P; Tongyam, C

Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer Journal Article

In: Journal of Crystal Growth, vol. 477, pp. 217-220, 2017, ISSN: 00220248, (cited By 1).

Abstract | Links

20.

Vorathamrong, S; Panyakeow, S; Ratanathammaphan, S; Praserthdam, P; Tongyam, C

Observation of self-assisted GaAs nanowire growth by molecular beam epitaxy on GaAs (1 1 1)B without SiO2 layer Journal Article

In: Materials Research Express, vol. 4, no. 9, 2017, ISSN: 20531591, (cited By 2).

Abstract | Links

21.

Zon,; Poempool, T; Kiravittaya, S; Nuntawong, N; Sopitpan, S; Thainoi, S; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate Journal Article

In: Electronic Materials Letters, vol. 12, no. 4, pp. 517-523, 2016, ISSN: 17388090, (cited By 6).

Abstract | Links

22.

Eiwwongcharoen, W; Nakareseisoon, N; Thainoi, S; Panyakeow, S; Kanjanachuchai, S

Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields Journal Article

In: CrystEngComm, vol. 18, no. 31, pp. 5852-5859, 2016, ISSN: 14668033, (cited By 4).

Abstract | Links

23.

Trisna, B A; Nakareseisoon, N; Eiwwongcharoen, W; Panyakeow, S; Kanjanachuchai, S

Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns Journal Article

In: Nanoscale Research Letters, vol. 10, no. 1, 2015, ISSN: 19317573, (cited By 8).

Abstract | Links

24.

Kanjanachuchai, S; Xu, M; Jaffré, A; Jittrong, A; Chokamnuai, T; Panyakeow, S; Boutchich, M

Excitation transfer in stacked quantum dot chains Journal Article

In: Semiconductor Science and Technology, vol. 30, no. 5, pp. 1-7, 2015, ISSN: 02681242, (cited By 3).

Abstract | Links

25.

Kunrugsa, M; Tung, K H P; Danner, A J; Panyakeow, S; Ratanathammaphan, S

Fabrication of GaSb quantum rings on GaAs(0 0 1) by droplet epitaxy Journal Article

In: Journal of Crystal Growth, vol. 425, pp. 287-290, 2015, ISSN: 00220248, (cited By 4).

Abstract | Links

88 entries « 1 of 4 »