Associate Professor Somchai Ratanathammaphan, D. Eng.

รศ. ดร.สมชัย รัตนธรรมพันธ์

Education

  • D.Eng    Electrical Engineering, Chulalongkorn University
  • M.Eng.  Electrical Engineering, Chulalongkorn University
  • B.Eng.   Electrical Engineering, Chulalongkorn University

Email: Somchai.R@chula.ac.th

Research Interest

  • Integrated optics
  • Semiconductor lasers
  • III-V compound technology
  • Printed electronics
  • Application of nanoparticles on electronic manufacturing

Research Cluster

51 entries « 2 of 3 »
26.

Tubchareon, T; Soisuwan, S; Ratanathammaphan, S; Praserthdam, P

Effect of carbon-dopant on the optical band gap and photoluminescence properties of [Ba0.5Sr0.5]TiO3 powders synthesized by the sol-gel process Journal Article

In: Journal of Luminescence, vol. 145, pp. 919-924, 2014, ISSN: 00222313, (cited By 4).

Abstract | Links

27.

Prongjit, P; Pankaow, N; Boonpeng, P; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

Tensile strained, type II, GaP/GaAs nanostructures Journal Article

In: Chiang Mai Journal of Science, vol. 40, no. 6 SPEC. ISSUE 2, pp. 957-962, 2013, ISSN: 01252526, (cited By 0).

Abstract | Links

28.

Han, S S; Higo, A; Yunpeng, W; Deura, M; Sugiyama, M; Nakano, Y; Panyakeow, S; Ratanathammaphan, S

Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy Journal Article

In: Microelectronic Engineering, vol. 112, pp. 143-148, 2013, ISSN: 01679317, (cited By 1).

Abstract | Links

29.

Boonpeng, P; Kiravittaya, S; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

InGaAs quantum-dot-in-ring structure by droplet epitaxy Journal Article

In: Journal of Crystal Growth, vol. 378, pp. 435-438, 2013, ISSN: 00220248, (cited By 11).

Abstract | Links

30.

Pankaow, N; Prongjit, P; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

Ring-to-dots transformation of InGaAs quantum rings grown by droplet epitaxy Journal Article

In: Microelectronic Engineering, vol. 110, pp. 298-301, 2013, ISSN: 01679317, (cited By 2).

Abstract | Links

31.

Tubchareon, T; Soisuwan, S; Ratanathammaphan, S; Praserthdam, P

Effect of Na-, K-, Mg-, and Ga dopants in A/B-sites on the optical band gap and photoluminescence behavior of [Ba0.5Sr0.5]TiO 3 powders Journal Article

In: Journal of Luminescence, vol. 142, pp. 75-80, 2013, ISSN: 00222313, (cited By 24).

Abstract | Links

32.

Han, S S; Panyakeow, S; Ratanathammaphan, S; Higo, A; Yunpeng, W; Deura, M; Sugiyama, M; Nakano, Y

The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys Journal Article

In: Canadian Journal of Chemical Engineering, vol. 90, no. 4, pp. 915-918, 2012, ISSN: 00084034, (cited By 0).

Abstract | Links

33.

Tangmettajittakul, O -A; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy Journal Article

In: Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 9, no. 7, pp. 1534-1536, 2012, ISSN: 18626351, (cited By 1).

Abstract | Links

34.

Prongjit, P; Pankaow, N; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

Formation of GaP nanostructures on GaAs (100) by droplet molecular beam epitaxy Journal Article

In: Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 9, no. 7, pp. 1540-1542, 2012, ISSN: 18626351, (cited By 4).

Abstract | Links

35.

Pankaow, N; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount Journal Article

In: Journal of Crystal Growth, vol. 323, no. 1, pp. 282-285, 2011, ISSN: 00220248, (cited By 7).

Abstract | Links

36.

Jevasuwan, W; Boonpeng, P; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy Journal Article

In: Journal of Crystal Growth, vol. 323, no. 1, pp. 275-278, 2011, ISSN: 00220248, (cited By 7).

Abstract | Links

37.

Boonpeng, P; Jevasuwan, W; Nuntawong, N; Thainoi, S; Panyakeow, S; Ratanathammaphan, S

Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(0 0 1) by droplet epitaxy Journal Article

In: Journal of Crystal Growth, vol. 323, no. 1, pp. 271-274, 2011, ISSN: 00220248, (cited By 4).

Abstract | Links

38.

Jevasuwan, W; Boonpeng, P; Panyakeow, S; Ratanathammaphan, S

Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy Journal Article

In: Journal of Nanoscience and Nanotechnology, vol. 10, no. 11, pp. 7291-7294, 2010, ISSN: 15334880, (cited By 2).

Abstract | Links

39.

Boonpeng, P; Jevasuwan, W; Panyakeow, S; Ratanathammaphan, S

Fabrication of self-assembled InGaAs squarelike nanoholes on GaAs(001) by droplet epitaxy Journal Article

In: Japanese Journal of Applied Physics, vol. 49, no. 4 PART 2, 2010, ISSN: 00214922, (cited By 3).

Abstract | Links

40.

Boonpeng, P; Jevasuwan, W; Suraprapapich, S; Ratanathammaphan, S; Panyakeow, S

Quadra-quantum dots grown on quantum rings having square-shaped holes: Basic nanostructure for quantum dot cellular automata application Journal Article

In: Microelectronic Engineering, vol. 86, no. 4-6, pp. 853-856, 2009, ISSN: 01679317, (cited By 17).

Abstract | Links

41.

Pankaow, N; Panyakeow, S; Ratanathammaphan, S

Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxy Journal Article

In: Journal of Crystal Growth, vol. 311, no. 7, pp. 1832-1835, 2009, ISSN: 00220248, (cited By 19).

Abstract | Links

42.

Boonpeng, P; Panyakeow, S; Ratanathammaphan, S

Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy Journal Article

In: Journal of Crystal Growth, vol. 311, no. 7, pp. 1843-1846, 2009, ISSN: 00220248, (cited By 1).

Abstract | Links

43.

Swe, N C; Tangmattajittakul, O; Suraprapapich, S; Changmoang, P; Thainoi, S; Wissawinthanon, C; Kanjanachuchai, S; Ratanathammaphan, S; Panyakeow, S

Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAsGaAs quantum well structures by molecular beam epitaxy Journal Article

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 26, no. 3, pp. 1100-1104, 2008, ISSN: 10711023, (cited By 3).

Abstract | Links

44.

Boonpeng, P; Panyakeow, S; Ratanathammaphan, S

In-mole-fraction and thickness of ultra-thin InGaAs Insertion layers effects on the structural and optical properties of InAs quantum dots Journal Article

In: Advanced Materials Research, vol. 31, pp. 132-134, 2008, ISSN: 10226680, (cited By 0; Conference of International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference Date: 1 July 2007 Through 6 July 2007; Conference Code:72337).

Abstract | Links

45.

Pankaow, N; Panyakeow, S; Ratanathammaphan, S

Nanometer-scale in0.5Ga0.5As ring-like structure grown by droplet epitaxy Journal Article

In: Advanced Materials Research, vol. 31, pp. 123-125, 2008, ISSN: 10226680, (cited By 4; Conference of International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference Date: 1 July 2007 Through 6 July 2007; Conference Code:72337).

Abstract | Links

46.

Jewasuwan, W; Panyakeow, S; Ratanathammaphan, S

The formation of InP ring-shape nanostructures on in0.49Ga 0.51P grown by droplet epitaxy Journal Article

In: Advanced Materials Research, vol. 31, pp. 158-160, 2008, ISSN: 10226680, (cited By 0; Conference of International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference Date: 1 July 2007 Through 6 July 2007; Conference Code:72337).

Abstract | Links

47.

Jevasuwan, W; Panyakeow, S; Ratanathammaphan, S

In-droplet-induced formation of InP nanostructures by solid-source molecular-beam epitaxy Journal Article

In: Microelectronic Engineering, vol. 84, no. 5-8, pp. 1548-1551, 2007, ISSN: 01679317, (cited By 8).

Abstract | Links

48.

Kiravittaya, S; Songmuang, R; Changmuang, P; Sopitpan, S; Ratanathammaphan, S; Sawadsaringkarn, M; Panyakeow, S

InAs/GaAs self-organized quantum dots on (4 1 1)A GaAs by molecular beam epitaxy Journal Article

In: Journal of Crystal Growth, vol. 227-228, pp. 1010-1015, 2001, ISSN: 00220248, (cited By 13; Conference of 11th International Conference on Molecular Beam Epitaxy ; Conference Date: 11 September 2000 Through 15 September 2000; Conference Code:58293).

Abstract | Links

49.

Kiravittaya, S; Manmontri, U; Sopitpan, S; Ratanathammaphan, S; Antarasen, C; Sawadsaringkarn, M; Panyakeow, S

AlGaAs/GaAs/InGaAs composite MQW structures for photovoltaic applications Journal Article

In: Solar Energy Materials and Solar Cells, vol. 68, no. 1, pp. 89-95, 2001, ISSN: 09270248, (cited By 10).

Abstract | Links

50.

Deesirapipat, Y; Thainoi, S; Ratanathammaphan, S; Antarasena, C

Simple fabrication technique of symmetrical emitter-collector zinc-doped planar Ga1-xAlxAs/GaAs/Ga1-yAlyAs double heterojunction bipolar transistors Journal Article

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 A, pp. 2127-2131, 2001, ISSN: 00214922, (cited By 0).

Abstract | Links

51 entries « 2 of 3 »